Title :
Pulse-induced magnetization switching in (Ga, Mn) As Hall bar
Author :
Park, S. ; Jo, Y. ; Jung, M. ; Anh, N. ; Shin, K. ; Eom, J. ; Chun, S.
Author_Institution :
Korea Basic Sci. Inst., Daejeon
Abstract :
In this research, the angle dependance of Hall voltage and pulse-induced magnetization switching (PIMS) have been studied by electrical transport measurements in the Hall-bar shaped (Ga,Mn)As. Planar Hall data might be governed by a magnetization switching at low field and also the switching could be easily induced by voltage pulses. When the amplitude of the pulse is higher, the switching is more quickly achieved.
Keywords :
Hall effect; gallium arsenide; magnetic switching; magnetisation; magnetoresistance; manganese compounds; semimagnetic semiconductors; GaMnAs; Hall bar; Hall voltage; PIMS; electrical transport; magnetoresistance; planar Hall data; pulse-induced magnetization switching; voltage pulses; Anisotropic magnetoresistance; Magnetic field measurement; Magnetic fields; Magnetic switching; Magnetization; Pulse amplifiers; Pulse measurements; Switches; Temperature measurement; Voltage;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375852
