DocumentCode
2937967
Title
Impact of Output Non-Quasi-Static Effect on Consistency Between Two Cutoff Frequency Extraction Methods in Bipolar Transistor Simulation
Author
Luo, Lan ; Niu, Guofu
Author_Institution
Dept. of ECE, Auburn Univ., Auburn, AL
fYear
2008
fDate
23-25 Jan. 2008
Firstpage
122
Lastpage
125
Abstract
In device simulation, fT is typically extracted at a single low frequency, e.g. 1 MHz, using gm/2piC. This is generally believed to give the same fT as traditional -20 dB/decade slope extrapolation of |h21| at high frequencies. A large discrepancy between the two fT extraction methods is observed, and the degree of discrepancy is found to depend on BGN and temperature. We explain the discrepancy as a consequence of output NQS effect and develop a new fT equation including output NQS effect. The BGN model dependence can then be understood through ac current gain betaac. New methods of simulating fT are developed, which maintain the simplicity of gm/2piC extraction while giving the same results as -20 dB/decade extrapolation.
Keywords
Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor device models; HBT; SiGe; bandgap narrowing; bipolar transistor simulation; cutoff frequency extraction; device simulation; nonquasi-static effect; output NQS effect; physical modeling interface; Bipolar transistors; Cutoff frequency; Data mining; Extrapolation; Frequency measurement; Germanium silicon alloys; Microelectronics; Silicon germanium; Telephony; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1855-8
Electronic_ISBN
978-1-4244-1856-5
Type
conf
DOI
10.1109/SMIC.2008.37
Filename
4446271
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