Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications

Author

Wood, John ; Aaen, Peter H. ; Plá, Jaime A.

Author_Institution

Freescale Semicond. Inc., Tempe, AZ

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

134

Lastpage

138

Abstract

In this review we present a measurement-based approach to the creation of a successful circuit model of a high-power RF FET. We describe some of the measurement challenges that we face in the characterization and validation of the FET model, and our approach to their solution. We also outline some of the simulation and modeling techniques that are used in the construction of the complete transistor model. The model itself is fully nonlinear, with a self-consistent dynamic electrothermal component, and includes the in-package matching and package components, which are derived from electro-magnetic simulations.

Keywords

power MOSFET; power amplifiers; LDMOS power FET; RF power amplifier applications; complete transistor model; electro-magnetic simulations; high-power RF FET; in-package matching; measurement-based approach; package components; self-consistent dynamic electrothermal component; Bonding; FETs; High power amplifiers; Microwave transistors; Operational amplifiers; Packaging; Power amplifiers; Power system modeling; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1855-8

Electronic_ISBN

978-1-4244-1856-5

Type

conf

DOI

10.1109/SMIC.2008.40

Filename

4446274