Losses Characterization of Tunable Barium Strontium Titanate Materials Integrated on Silicon Substrate

The optimizations of the growth of barium strontium titanate (BST) on silicon substrate requires very accurate characterization method of its intrinsic losses. The total losses in the structure are computed from its measured tuned RF performance for different applied bias and then a full deembedding of the ohmic losses is carried out by the substruction of the total losses at zero bias, enabling the intrinsic-loss of the BST thin film to be extracted. The losses of the BST material is both frequency and voltage dependent. The losses of the BST found to be frequency dependent up to 10 GHz.