• DocumentCode
    2938130
  • Title

    SiC Varactor Based Tunable Filters with Enhanced Linearity

  • Author

    Roy, Manas ; Ward, Robert J. ; Higgins, J.A.

  • Author_Institution
    Rockwell Collins, Cedar Rapids, IA
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    The wide bandgap material silicon carbide(SiC) has been used to implement a varactor which provides high Q, high voltage capability, and low losses when employed to realize tunable filters for high power signals in the VHF band. The variable capacitance diode can reach reverse bias levels of -120 Volts. These varactors have been used in a three pole filter at VHF frequencies and have shown < 3 dB loss with bandwidth of less than ~10% in the ISO MHz range. The devices have been designed and fabricated in a manner to facilitate employing the varactors as back-to-back pairs. Measurements of the three pole filters demonstrate that this arrangement results in a substantial improvement in input intercept point (IIP3) power levels.
  • Keywords
    III-V semiconductors; VHF filters; resonator filters; semiconductor device breakdown; silicon compounds; varactors; wide band gap semiconductors; SiC; SiC varactor; enhanced linearity; high Q; high voltage capability; input intercept point; low losses; tunable filters; Bandwidth; Capacitance; Diodes; Frequency; Linearity; Low voltage; Photonic band gap; Power filters; Silicon carbide; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.47
  • Filename
    4446281