Title :
An analytical model of power bipolar transistor for circuit simulation
Author :
Fatemizadeh, B. ; Lauritzen, P.O.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all important physical effects: recombination in base and emitter; high injection; collector conductivity modulation; quasi-saturation; carrier velocity saturation; and displacement current
Keywords :
circuit analysis computing; electron-hole recombination; power bipolar transistors; semiconductor device models; analytical model; base recombination; carrier velocity saturation; circuit simulation; collector conductivity modulation; displacement current; emitter recombination; high injection; physical effects; power bipolar junction transistor; power electronics; quasi-saturation; simulation time; Analytical models; Bipolar transistors; Circuit simulation; Computational modeling; Conductivity; Equations; Power electronics; Power system modeling; Semiconductor process modeling; Voltage;
Conference_Titel :
Computers in Power Electronics, 1996., IEEE Workshop on
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-3977-0
DOI :
10.1109/CIPE.1996.612348
