DocumentCode
2938213
Title
An analytical model of power bipolar transistor for circuit simulation
Author
Fatemizadeh, B. ; Lauritzen, P.O.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1996
fDate
11-14 Aug 1996
Firstpage
132
Lastpage
135
Abstract
This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all important physical effects: recombination in base and emitter; high injection; collector conductivity modulation; quasi-saturation; carrier velocity saturation; and displacement current
Keywords
circuit analysis computing; electron-hole recombination; power bipolar transistors; semiconductor device models; analytical model; base recombination; carrier velocity saturation; circuit simulation; collector conductivity modulation; displacement current; emitter recombination; high injection; physical effects; power bipolar junction transistor; power electronics; quasi-saturation; simulation time; Analytical models; Bipolar transistors; Circuit simulation; Computational modeling; Conductivity; Equations; Power electronics; Power system modeling; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 1996., IEEE Workshop on
Conference_Location
Portland, OR
ISSN
1093-5142
Print_ISBN
0-7803-3977-0
Type
conf
DOI
10.1109/CIPE.1996.612348
Filename
612348
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