• DocumentCode
    2938218
  • Title

    Transient Switching Behavior in Silicon MOSFET RF Switches

  • Author

    Caverly, Robert H. ; Manosca, Jeffrey J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Villanova Univ., Villanova, PA
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.
  • Keywords
    field effect transistor switches; microwave switches; radiofrequency integrated circuits; RFIC; distributed RC gate effect; external gate bias resistance; microwave switches; silicon MOS device; silicon MOSFET RF switches; switching speed; transient switching behavior; Electrical resistance measurement; Fingers; Impedance; MOSFET circuits; Power MOSFET; Power system modeling; Radio frequency; Radiofrequency integrated circuits; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.51
  • Filename
    4446285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2938218