Title :
Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications
Author :
Xu, Haifeng ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL
Abstract :
Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET´s with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors achieve Qmin of ~ 80 at 24 GHz with a tuning range of ~ 40%.
Keywords :
MIS structures; MOSFET; radiofrequency integrated circuits; Bulk CMOS T/R switch; MOSFET; RF circuit application; SDR MOS varactors; frequency 2.4 GHz; frequency 900 MHz; insertion loss; sub-design-rule polysilicon lengths; thick-gate-oxide MOS structures; voltage 3.3 V; CMOS technology; Circuits; Insertion loss; Leg; MOSFETs; Radio frequency; Switches; Transistors; Varactors; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.53
