DocumentCode :
2938294
Title :
50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
Author :
Gentile, G. ; Buisman, K. ; Akhoukh, A. ; de Vreede, L.C.N. ; Rejaei, B. ; Nanver, L.K.
Author_Institution :
Lab. of High Freq. Technol. & Components, Tech. Univ. Delft, Delft
fYear :
2008
fDate :
23-25 Jan. 2008
Firstpage :
199
Lastpage :
202
Abstract :
We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.
Keywords :
diodes; phase shifters; silicon; varactors; Si; coplanar phase shifter; dc bias voltage; differential phase shift; frequency 50 GHz; integrated distributed phase shifter; silicon on glass; varactor diodes; voltage 2.1 V to 15 V; Capacitance; Coplanar waveguides; Frequency; Glass; Phase shifters; Phased arrays; Schottky diodes; Semiconductor diodes; Varactors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
Type :
conf
DOI :
10.1109/SMIC.2008.56
Filename :
4446290
Link To Document :
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