Nano-lithography with metastable helium atoms

Author

Petra, S.J.H. ; Feenstra, L. ; Vassen, W. ; Hogervorst, W.

Author_Institution

Dept. of Phys. & Astron., Vrije Univ., Amsterdam, Netherlands

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. The goal of the project is to create sub-100 nm structures on a silicon surface covered with a metal film, using a beam of metastable helium atoms. The internal energy (20 eV) of the metastable helium atoms is used to selectively damage an organic resist layer (a self-assembled monolayer) deposited on the metal coating, thereby preparing the surface for a chemical etching process. By means of the etching process, the damaged organic molecules are removed and the pattern is transferred to the underlying metal film.

Keywords

atom-surface impact; atomic beams; etching; helium neutral atoms; laser cooling; lithography; metastable states; nanotechnology; resists; self-assembly; 20 eV; 2D Doppler cooling; He; Si; chemical etching process; internal energy; laser cooling; metal film coated surface; metastable atom beam; nanolithography; organic resist layer; selective damage; self-assembled monolayer; Atomic beams; Atomic layer deposition; Chemical processes; Coatings; Etching; Helium; Metastasis; Resists; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 2000. Conference Digest. 2000 International

Conference_Location

Nice, France

Print_ISBN

0-7803-6318-3

Type

conf

DOI

10.1109/IQEC.2000.907946

Filename

907946