Title :
Analyzing power MOSFET breakdown voltage using simulators
Author :
Chrzanowska-Jeske, Malgorzata
Author_Institution :
Dept. of Electr. Eng., Portland State Univ., OR, USA
Abstract :
A comprehensive analysis of the performance of the power MOSFET using process and device simulators is described. The power MOSFET process is simulated using TSUPREM and the simulated profile is used as an input to MEDICI to simulate the device performance. The dependence of the breakdown voltage on the device parameters, epi-layer thickness and doping concentration, and the parameter variations are used to establish the values of design parameters for the target breakdown voltage and desired yield
Keywords :
circuit analysis computing; electric breakdown; power MOSFET; semiconductor device models; semiconductor doping; software packages; MEDICI; TSUPREM; breakdown voltage analysis; computer simulation; design parameters; device parameters; epi-layer doping concentration; epi-layer thickness; performance simulation; power MOSFET; Analytical models; Avalanche breakdown; Doping; MOSFET circuits; Medical simulation; Packaging; Performance analysis; Power MOSFET; Software packages; Yield estimation;
Conference_Titel :
Computers in Power Electronics, 1996., IEEE Workshop on
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-3977-0
DOI :
10.1109/CIPE.1996.612349
