DocumentCode
2938431
Title
Analyzing power MOSFET breakdown voltage using simulators
Author
Chrzanowska-Jeske, Malgorzata
Author_Institution
Dept. of Electr. Eng., Portland State Univ., OR, USA
fYear
1996
fDate
11-14 Aug 1996
Firstpage
136
Lastpage
141
Abstract
A comprehensive analysis of the performance of the power MOSFET using process and device simulators is described. The power MOSFET process is simulated using TSUPREM and the simulated profile is used as an input to MEDICI to simulate the device performance. The dependence of the breakdown voltage on the device parameters, epi-layer thickness and doping concentration, and the parameter variations are used to establish the values of design parameters for the target breakdown voltage and desired yield
Keywords
circuit analysis computing; electric breakdown; power MOSFET; semiconductor device models; semiconductor doping; software packages; MEDICI; TSUPREM; breakdown voltage analysis; computer simulation; design parameters; device parameters; epi-layer doping concentration; epi-layer thickness; performance simulation; power MOSFET; Analytical models; Avalanche breakdown; Doping; MOSFET circuits; Medical simulation; Packaging; Performance analysis; Power MOSFET; Software packages; Yield estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 1996., IEEE Workshop on
Conference_Location
Portland, OR
ISSN
1093-5142
Print_ISBN
0-7803-3977-0
Type
conf
DOI
10.1109/CIPE.1996.612349
Filename
612349
Link To Document