Hexagonal patterns and spatial solitons in a semiconductor microresonator

Author

Taranenko, V.B. ; Weiss, C.O.

Author_Institution

PTB, Braunschweig, Germany

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. We report the experimental observation of extended and localized structures in a driven quantum-well-GaAs/GaAlAs resonator, potentially useful for optical parallel information processing and storing. Light from a Ti:Al/sub 2/O/sub 3/ laser tuned in the vicinity of the exciton line irradiates the resonator of approx. 3 /spl mu/m thickness in a 50 /spl mu/m-width Gaussian beam, to yield a reasonable Fresnel number as needed for pattern formation. Observations are done in reflection.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; micro-optics; optical information processing; optical resonators; optical solitons; optical storage; semiconductor heterojunctions; semiconductor quantum wells; 3 mum; 50 mum; Al/sub 2/O/sub 3/:Ti; Fresnel number; GaAs-GaAlAs; GaAs/GaAlAs resonator; Gaussian beam; Ti:Al/sub 2/O/sub 3/ laser; driven quantum-well resonator; exciton line; extended structures; hexagonal patterns; localized structures; optical parallel information processing; optical storage; pattern formation; reflection; semiconductor microresonator; spatial solitons; Excitons; Information processing; Laser beams; Laser tuning; Microcavities; Optical resonators; Optical solitons; Pattern formation; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 2000. Conference Digest. 2000 International

Conference_Location

Nice, France

Print_ISBN

0-7803-6318-3

Type

conf

DOI

10.1109/IQEC.2000.907986

Filename

907986