X-band phased array development on teflon laminates with CMOS RFIC receivers

Author

Ho, Kevin Ming-Jiang ; Shin, Donghyup ; Rebeiz, Gabriel M.

Author_Institution

Univ. of California, San Diego, La Jolla, CA, USA

fYear

2011

fDate

3-8 July 2011

Firstpage

565

Lastpage

568

Abstract

We present the development of an 8-channel X-band microstrip phased array receiver with beam-scan capability of +/-45 degrees in the azimuth plane. Two 0.13 μm CMOS RFIC chips are integrated directly on the laminates for the array feed network, with each chip comprising of a 4-way power combiner network and 4 channels of RF front-end. Each RF-front-end consists of an LNA, a VGA and a phase shifter, and the total chip size is 2.9 by 2.5 mm². The design center frequency and bandwidth is 9.2 GHz and 75 MHz, respectively. An aperture coupled microstrip antenna is used for the basic radiating element, and measured response for the microstrip element deviates from the simulated response by 1.2 %.

Keywords

CMOS integrated circuits; antenna phased arrays; aperture-coupled antennas; radiofrequency integrated circuits; receiving antennas; 4-way power combiner network; CMOS RFIC receivers; LNA; RF front-end; Teflon laminates; VGA; X-band microstrip phased array receiver; X-band phased array development; aperture coupled microstrip antenna; bandwidth 75 MHz; beam-scan capability; design center frequency; frequency 9.2 GHz; microstrip element deviates; phase shifter; radiating element; size 0.13 mum; size 2.5 mm; size 2.9 mm; Arrays; Feeds; Laminates; Microstrip; Microstrip antenna arrays; Radiofrequency integrated circuits; Receivers; CMOS RFIC receiver; antenna array; microstrip patch antenna; microwave laminates; phased array;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on

Conference_Location

Spokane, WA

ISSN

1522-3965

Print_ISBN

978-1-4244-9562-7

Type

conf

DOI

10.1109/APS.2011.5996771

Filename

5996771