p-type silicon drift detectors: first results

Author

Wang, N.W. ; Krieger, B. ; Krofcheck, D. ; Lewak, D. ; Naudet, C.J. ; O´Donnell, Ryan ; Odyniec, G. ; Partlan, M. ; Rudolph, H.W. ; Walton, J.T. ; Wilson, W.K.

Author_Institution

Lawrence Berkeley Lab., CA, USA

Volume

1

fYear

1994

fDate

30 Oct-5 Nov 1994

Firstpage

168

Abstract

We have fabricated a 4 cm long, position-sensitive silicon drift detector using high purity, p-type silicon as the starting material. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si-SiO₂ interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and maximize breakdown voltages. Preliminary tests show that a drift signal can be measured across the entire length of the detectors and that the transit time of the holes varies linearly with the position of the induced charge signal

Keywords

leakage currents; position sensitive particle detectors; silicon radiation detectors; 4 cm; Si; Si drift detector; Si-SiO₂; Si/SiO₂ interface; breakdown voltage; double-sided planar process; fabrication; hole transit time; leakage currents; p-type; position-sensitive; surface carrier inversion; Charge measurement; Current measurement; Fabrication; Leakage current; Length measurement; Position measurement; Position sensitive particle detectors; Silicon; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-2544-3

Type

conf

DOI

10.1109/NSSMIC.1994.474435

Filename

474435