DocumentCode :
293917
Title :
Properties of melt-grown ZnSe solid-state radiation detectors
Author :
Eissler, E.E. ; Lynn, K.G.
Author_Institution :
eV PRODUCTS, Saxonburg, PA, USA
Volume :
2
fYear :
1994
fDate :
30 Oct-5 Nov 1994
Firstpage :
1005
Abstract :
Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10×10×2 mm3. Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25°C. Pulse height spectra were obtained using 241Am and 109Cd at both 25°C and 150°C with applied bias of 9000 V/cm. Current versus temperature was measured over the temperature range of 30°C to 150°C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of -70°C to 170°C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product (μτ) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied
Keywords :
II-VI semiconductors; crystal growth from melt; gamma-ray detection; semiconductor counters; solid scintillation detectors; zinc compounds; -70 to 170 C; 150 C; 22.1 keV; 25 C; 30 to 150 C; 59.5 keV; 662 keV; 109Cd; 241Am; High Pressure Bridgman technique; Mobility-Lifetime product; Pulse Height Analysis; ZnSe crystals; applied bias; current characteristics; dose rate; gamma irradiation; melt-grown ZnSe solid-state radiation detectors; photo-peak position; polished detector blanks; pulse height spectra; sputtered Au contacts; sputtered Pt contacts; temperature dependence; temperature range; time dependence; voltage characteristics; Crystals; Current measurement; Gold; Platinum; Pressure measurement; Radiation detectors; Solid state circuits; Temperature distribution; Temperature measurement; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
Type :
conf
DOI :
10.1109/NSSMIC.1994.474453
Filename :
474453
Link To Document :
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