Title :
Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors
Author :
Lund, J.C. ; Olschner, F. ; Bennett, P. ; Rehn, L.
fDate :
30 Oct-5 Nov 1994
Abstract :
Junction field-effect transistors (JFETs) were fabricated directly onto a high resistivity silicon wafer and tested as readout devices for radiation detectors. The JFETs were fabricated using an n-channel epitaxial process. We report on the design and electrical characteristics of these devices as well as the noise performance and energy resolution obtained with these devices when operated as X-ray spectrometers
Keywords :
JFET integrated circuits; X-ray detection; X-ray spectrometers; detector circuits; nuclear electronics; semiconductor device noise; semiconductor epitaxial layers; silicon radiation detectors; Si; X-ray detectors; X-ray spectrometers; electrical characteristics; energy resolution; epitaxial n-channel integrated JFET; high resistivity Si; junction field-effect transistors; noise performance; radiation detectors; readout devices; Capacitance; Conductivity; Fabrication; Implants; JFETs; Production; Silicon; Substrates; Testing; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
DOI :
10.1109/NSSMIC.1994.474468
