Title :
Spectrometric characteristic improvement of CdTe detectors
Author :
Ivanov, V.I. ; Garbusin, V. ; Dorogov, P.G. ; Loutchanski, A.E. ; Kondrashov, V.V.
Author_Institution :
Baltic Sci. Instrum., RITEC Ltd., Riga, Latvia
fDate :
30 Oct-5 Nov 1994
Abstract :
A new pulse shape correction method combined with a pulse shape selection method has been proposed for a CdTe detectors energy resolution improving and the total absorption peak efficiency increasing. The capabilities of the new technique for the spectrometric characteristic improvement are based on the using of specific features of the CdTe detectors output pulses. The energy resolution of about 1% FWHM at 662 keV have been achieved with planar CdTe detector under room temperature without decrease of peak efficiency. Standard measurement techniques give 3.7% FWHM. A significant spectrometric characteristic improvement of the other room temperature semiconductor detectors such as HgI2 and CdZnTe detectors was also obtained
Keywords :
II-VI semiconductors; cadmium compounds; gamma-ray detection; semiconductor counters; CdTe detectors; CdZnTe detectors; HgI2 detectors; energy resolution; peak efficiency; planar CdTe detector; pulse shape correction method; pulse shape selection method; room temperature semiconductor detectors; spectrometric characteristic improvement; total absorption peak efficiency; Absorption; Detectors; Energy resolution; Pulse amplifiers; Pulse shaping methods; Scattering; Semiconductor materials; Shape; Spectroscopy; Temperature;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
DOI :
10.1109/NSSMIC.1994.474484