DocumentCode :
2939956
Title :
Magnetic Moment of Ultrathin Epitaxial Fe3O4 Films on GaAs(100)
Author :
Zhai, Y. ; Lu, Y. ; Ni, C. ; Li, G. ; Niu, D. ; Wong, P. ; Xu, Y. ; Zhai, H.
Author_Institution :
York Univ., York
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
376
Lastpage :
376
Abstract :
The magnetic properties, in particular, the thickness dependence of the magnetization of ultrathin Fe3O4 films grown on GaAs(100). The in-plane hysteresis loop from the VSM were measured for samples with various thickness in different field orientation. In the directions of [011 ] and [001 ], the remanence ratio increases with increasing film thickness and more distinctly during the change from 6 to 8 nm, while it drops at the thickness of 8nm in [0-11] direction.
Keywords :
iron compounds; magnetic anisotropy; magnetic epitaxial layers; magnetic hysteresis; magnetic moments; remanence; Fe3O4; GaAs; in-plane hysteresis loop; magnetic moment; magnetic properties; magnetization; remanence; ultrathin epitaxial films; uniaxial anisotropy; Anisotropic magnetoresistance; Ferrite films; Gallium arsenide; Iron; Magnetic anisotropy; Magnetic films; Magnetic moments; Magnetization; Perpendicular magnetic anisotropy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.376100
Filename :
4261809
Link To Document :
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