• DocumentCode
    2940041
  • Title

    Zinc-Blende Structure of CrTe Epilayers Grown on GaAs

  • Author

    Sreenivasan, M. ; Teo, K. ; Du, A. ; Jalil, M. ; Liew, T.

  • Author_Institution
    Nat. Univ. of Singapore, Singapore
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    381
  • Lastpage
    381
  • Abstract
    Recently, there is an increased interest in half-metallic materials with the zinc-blende structure for the purpose of injecting spin-polarised electrons into zinc-blende semiconductor substrates. Since most of the known half-metallic systems do not have the zinc blende structure and most of the solids with the zinc-blende structure are not half-metals, the focus is on finding materials which are more stable in other structures, but would exhibit half-metallic properties when synthesized as metastable zinc-blende structures. Some of these materials have already been explored such as MnAs, CrAs and CrSb, but their synthesis have been possible only in the form of nano-dots, ultra thin films or ultra thin films in multilayers.
  • Keywords
    III-V semiconductors; chromium compounds; electron spin polarisation; gallium arsenide; manganese compounds; molecular beam epitaxial growth; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; CrTe; GaAs; epilayers; half-metallic materials; half-metallic properties; metastable structures; multilayers; nanodots; spin-polarised electrons; ultra thin films; zinc-blende structure; Buffer layers; Chromium; Electrons; Gallium arsenide; SQUIDs; Semiconductor materials; Substrates; Temperature; Transistors; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.376105
  • Filename
    4261814