DocumentCode :
2940041
Title :
Zinc-Blende Structure of CrTe Epilayers Grown on GaAs
Author :
Sreenivasan, M. ; Teo, K. ; Du, A. ; Jalil, M. ; Liew, T.
Author_Institution :
Nat. Univ. of Singapore, Singapore
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
381
Lastpage :
381
Abstract :
Recently, there is an increased interest in half-metallic materials with the zinc-blende structure for the purpose of injecting spin-polarised electrons into zinc-blende semiconductor substrates. Since most of the known half-metallic systems do not have the zinc blende structure and most of the solids with the zinc-blende structure are not half-metals, the focus is on finding materials which are more stable in other structures, but would exhibit half-metallic properties when synthesized as metastable zinc-blende structures. Some of these materials have already been explored such as MnAs, CrAs and CrSb, but their synthesis have been possible only in the form of nano-dots, ultra thin films or ultra thin films in multilayers.
Keywords :
III-V semiconductors; chromium compounds; electron spin polarisation; gallium arsenide; manganese compounds; molecular beam epitaxial growth; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; CrTe; GaAs; epilayers; half-metallic materials; half-metallic properties; metastable structures; multilayers; nanodots; spin-polarised electrons; ultra thin films; zinc-blende structure; Buffer layers; Chromium; Electrons; Gallium arsenide; SQUIDs; Semiconductor materials; Substrates; Temperature; Transistors; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.376105
Filename :
4261814
Link To Document :
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