Title :
A Heat Interaction Investigation in Thermally Assisted MRAM
Author :
Liu, Z. ; Han, G. ; Zheng, Y.
Author_Institution :
Data Storage Inst., Singapore
Abstract :
In this work, the heat interaction effect for adjacent cells is investigated. To simplify the process, five magnetic random access memory (MRAM) cells are chosen. All the cell sizes used here are in 100 nmtimes50 nm, but the distances between each other are changed (X-easy axis; Y-hard axis). The temperature rise is taken at the plane 5 nm above the heat elements for the central line across the three cells across the easy axis.
Keywords :
magnetic storage; random-access storage; easy axis; hard axis; heat interaction; magnetic random access memory cells; temperature rise; thermally assisted MRAM; Anisotropic magnetoresistance; Delay; Heating; Magnetic switching; Magnetization; Memory; Switches; Temperature distribution; Temperature sensors; Writing;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376117
