DocumentCode
2940192
Title
A Heat Interaction Investigation in Thermally Assisted MRAM
Author
Liu, Z. ; Han, G. ; Zheng, Y.
Author_Institution
Data Storage Inst., Singapore
fYear
2006
fDate
8-12 May 2006
Firstpage
393
Lastpage
393
Abstract
In this work, the heat interaction effect for adjacent cells is investigated. To simplify the process, five magnetic random access memory (MRAM) cells are chosen. All the cell sizes used here are in 100 nmtimes50 nm, but the distances between each other are changed (X-easy axis; Y-hard axis). The temperature rise is taken at the plane 5 nm above the heat elements for the central line across the three cells across the easy axis.
Keywords
magnetic storage; random-access storage; easy axis; hard axis; heat interaction; magnetic random access memory cells; temperature rise; thermally assisted MRAM; Anisotropic magnetoresistance; Delay; Heating; Magnetic switching; Magnetization; Memory; Switches; Temperature distribution; Temperature sensors; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376117
Filename
4261826
Link To Document