Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band

Author

Thalakotuna, D.N.P. ; Matekovits, L. ; Esselle, K.P. ; Heimlich, M.

Author_Institution

Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2011

fDate

3-8 July 2011

Firstpage

1808

Lastpage

1811

Abstract

Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches.

Keywords

S-parameters; UHF field effect transistors; field effect transistor switches; losses; microwave field effect transistors; microwave switches; photonic band gap; S band; active FET switch; active device insertion loss; active switching device; active tunable EBG structure; black box; electromagnetic bandgap characteristics; embedded scattering parameter; perfect conductor; switch packaging; transmission line effect; tunable 1D periodic structure; FETs; Metamaterials; Microstrip; Photonic band gap; Scattering parameters; Switches; active devices; electromagnetic bandgap;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on

Conference_Location

Spokane, WA

ISSN

1522-3965

Print_ISBN

978-1-4244-9562-7

Type

conf

DOI

10.1109/APS.2011.5996847

Filename

5996847