Title :
Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band
Author :
Thalakotuna, D.N.P. ; Matekovits, L. ; Esselle, K.P. ; Heimlich, M.
Author_Institution :
Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches.
Keywords :
S-parameters; UHF field effect transistors; field effect transistor switches; losses; microwave field effect transistors; microwave switches; photonic band gap; S band; active FET switch; active device insertion loss; active switching device; active tunable EBG structure; black box; electromagnetic bandgap characteristics; embedded scattering parameter; perfect conductor; switch packaging; transmission line effect; tunable 1D periodic structure; FETs; Metamaterials; Microstrip; Photonic band gap; Scattering parameters; Switches; active devices; electromagnetic bandgap;
Conference_Titel :
Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on
Conference_Location :
Spokane, WA
Print_ISBN :
978-1-4244-9562-7
DOI :
10.1109/APS.2011.5996847
