Title :
Positive exchange bias in Fe on antiferromagnetic semiconductor EuTe
Author :
Macedo, W.A. ; Nunes, W. ; Martins, M.D. ; Rapll, P.H. ; Oliveira, R.B., Jr. ; Motisuke, P. ; Knobel, M.
Author_Institution :
Lab. de Fisica Aplicada, Belo Horizonte
Abstract :
In this paper, the exchange bias effect in Fe/EuTe(111) bilayers prepared by molecular beam epitaxy (MBE) is investigated by SQUID. For cooling fields from 2 to 70 kOe, only positive shifts was found of the magnetic hysteresis loops. This result indicates antiferromagnetic coupling between the ferromagnetic (F) and the antiferromagnetic (AF) layer at the Fe/EuTe(111) interface independently of the applied cooling field. Fe/EuTe bilayers prepared on EuTe(111) surfaces with stoichiometry (Eu:Te = 2.1) and, consequently, magnetic order altered by Ar-sputtering do not present exchange bias.
Keywords :
antiferromagnetic materials; europium compounds; exchange interactions (electron); ferromagnetic materials; interface magnetism; iron; magnetic epitaxial layers; magnetic hysteresis; magnetic semiconductors; sputtering; stoichiometry; surface structure; Ar-sputtering; EuTe(111) surface; Fe-EuTe; MBE; SQUID; antiferromagnetic coupling; antiferromagnetic semiconductor; cooling; ferromagnetic-antiferromagnetic system; magnetic bilayer; magnetic hysteresis loops; magnetic order; molecular beam epitaxy; positive exchange bias; stoichiometry; Antiferromagnetic materials; Cooling; Helium; Hybrid fiber coaxial cables; Iron; Magnetic field measurement; Magnetic hysteresis; Magnetic semiconductors; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376136
