Title :
Performance comparison of IGBTs and MCTs in resonant converters
Author :
Li, H.H. ; Trivedi, M. ; Pendharkar, S. ; Winterhalter, C. ; Shenai, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
High-voltage IGBTs and MCTs were evaluated for application in hard- and soft-switching converters. Static I-V and dynamic switching characteristics were measured at temperatures ranging from 25°C to 125°C. An advanced mixed device and circuit simulator was used to understand the internal carrier dynamics within the semiconductor switching device in which semiconductor and heat diffusion equations are simultaneously solved subject to device boundary conditions imposed by the circuit operation. It is shown that the simulation results are in excellent agreement with the measured data and accurately predict the di/dt- and dv/dt- dependencies of the dynamic switching characteristics
Keywords :
MOS-controlled thyristors; circuit analysis computing; insulated gate bipolar transistors; power semiconductor switches; resonant power convertors; semiconductor device models; switching circuits; thermal diffusion; 25 to 125 C; IGBT; MCT; MOS controlled thyristors; advanced mixed device; circuit simulator; device boundary conditions; dynamic switching characteristics; heat diffusion equations; high-voltage; internal carrier dynamics; resonant converters; semiconductor switching device; static I-V characteristics; Circuit simulation; Insulated gate bipolar transistors; Inverters; MOSFETs; Manufacturing; Resonance; Semiconductor optical amplifiers; Temperature measurement; Thyristors; Zero voltage switching;
Conference_Titel :
Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-2730-6
DOI :
10.1109/PESC.1995.474791
