High linearity 40 watt, 28V InGaP/GaAs HBT

Author

Ma, Wenlong ; Sun, Xiaopeng ; Hu, Peter ; Yao, Jingshi ; Lin, Barry ; Chau, Hin-Fai ; Liu, Louis ; Lee, Chien-Ping

Author_Institution

WJ Communications, 401 River Oaks Parkway, San Jose, California, USA

fYear

2008

fDate

15-20 June 2008

Firstpage

647

Lastpage

650

Abstract

This paper reports on a 40 W high linearity InGaP/ GaAs 28 V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by WJ. The device employs a dynamic bias circuit to improve ACLR under WCDMA modulation conditions. The P-1 dB of the device reaches 46 dBm (40W), with a gain around 14.5 dB. With WCDMA one carrier modulation (PAR=8.5 dBc), the device achieves an ACLR of -50 dBC and an efficiency of 19.5% at an output power of 37.5 dBm (5.6 W) at 920-960 MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.

Keywords

III-V semiconductors; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; modulation; InGaP-GaAs; WCDMA modulation; breakdown voltage; dynamic bias circuit; frequency 920 MHz to 960 MHz; gain 14.5 dB; high linearity HBT; power 40 W; ruggedness; voltage 28 V; Base stations; Circuits; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power generation; Repeaters; HVHBT; Linearity; Power; WCDMA;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4632915

Filename

4632915