Title :
An area effective forward/reverse body bias generator for within-die variability compensation
Author :
Kamae, Norihiro ; Tsuchiya, Akira ; Onodera, Hidetoshi
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
Abstract :
To compensate the die-to-die and location correlated variation, we propose to split digital circuit to sub-mm-scale area controlling each area with an on-chip forward/reverse body bias generator (BBG). The proposed BBG is configured as a feedforward control system to achieve small area. The BBG is realized by combining a low output resistance DAC and a charge pump type level shifter. The BBG design is implemented with 1.2V thin gate oxide MOSFET in a 65nm CMOS technology. The simulation and measurement results show that the variation is compensated with an area overhead as small as 2%.
Keywords :
CMOS digital integrated circuits; MOSFET; charge pump circuits; digital-analogue conversion; feedforward; BBG design; CMOS technology; DAC; charge pump-type level shifter; die-to-die correlated variation; digital circuit; feedforward control system; forward-reverse body bias generator; location correlated variation; size 65 nm; sub-mm-scale area; thin gate oxide MOSFET; within-die variability compensation; Charge pumps; Clocks; Delay; Generators; Logic gates; Substrates; Switches; Body bias; CMOS; forward bias; reverse bias; substrate island; variability compensation;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-1784-0
DOI :
10.1109/ASSCC.2011.6123641