Title :
A 2-stage 150W 2.2GHz dual path LDMOS RF power amplifier for high efficiency applications
Author :
Cassan, Cédric ; Jones, Jeff ; Lembeye, Olivier
Author_Institution :
Freescale Semiconducteurs SAS, RF Division, 134 avenue du général Eisenhower, BP72329, 31023 Toulouse Cédex, France
Abstract :
This paper presents a dual path 150 W Silicon LDMOS 2-stage RF power amplifier designed for WCDMA at 2.2 GHz. This device is capable of handling 2 times the UMTS band with flat RF performance. Under a 1 tone CW stimulus, this power amplifier delivers 150 W with a power added efficiency of 47% and 29 dB linear gain. A 2-stage compact Doherty amplifier constructed of an ldquoin-packagerdquo 2 times 75 W architecture is also presented, showing the versatility of this unique design. Using the device in a dual-path configuration, this Doherty circuit delivers an increase in drain efficiency of 9-12 points at 8 dB output backoff from P3 dB compression, compared to a circuit using the device in a 150 W, class-AB reference design.
Keywords :
MOS integrated circuits; UHF integrated circuits; UHF power amplifiers; 2-stage compact Doherty amplifier; Si; UMTS band; WCDMA; class-AB reference design; dual path silicon LDMOS 2-stage RF power amplifier; frequency 2.2 GHz; high-efficiency applications; power 150 W; Broadband amplifiers; Circuits; High power amplifiers; Multiaccess communication; Packaging; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers; Silicon; broadband amplifiers; power amplifiers; silicon;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4632917
