Ultra-broadband 0.18-µm BiCMOS active baluns for extremely wideband RF applications

Author

Huynh, C. ; Nguyen, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA

fYear

2011

fDate

3-8 July 2011

Firstpage

2047

Lastpage

2050

Abstract

A new RF active balun is proposed, analyzed and designed using a 0.18-μm BiCMOS technology, showing its distinguished characteristic of good balance across ultra-wide frequency ranges. The active balun provides a high differential-mode gain and extremely low common-mode gain; hence, ultra-high common-mode signal suppression. The designed 0.18-μm BiCMOS active balun exhibits an ultra-broadband performance from 2 to 40 GHz differential-mode gain from 1 to 5.2 dB and common-mode signal suppression from 25 to 71 dB. Good matching at its input and output are obtained at the 35-GHz design frequency. The RF active balun consumes a dc current of 8.2 mA from a 1.8 V source.

Keywords

BiCMOS integrated circuits; baluns; radiofrequency integrated circuits; ultra wideband antennas; RF active balun; common mode gain; dc current; differential mode gain; frequency 2 GHz to 40 GHz; size 0.18 mum; ultra broadband BiCMOS active baluns; ultra high common mode signal suppression; ultra wide frequency range; ultra-broadband performance; wideband RF application; BiCMOS integrated circuits; Gain; Impedance; Impedance matching; Inductors; Radio frequency; Transistors; Active baluns; CMOS RFIC; CMOS integrated circuits; ultra-wideband circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on

Conference_Location

Spokane, WA

ISSN

1522-3965

Print_ISBN

978-1-4244-9562-7

Type

conf

DOI

10.1109/APS.2011.5996910

Filename

5996910