Title :
Effect of Electrostatic Discharge on Tunneling Magnetoresistive Recording Head
Author :
Lai, W. ; Leung, C. ; Wong, P. ; Shimizu, T.
Author_Institution :
SAE Magnetics (HK) Ltd., Hong Kong
Abstract :
Tunneling magnetoresistive (TMR) head are promising device for high storage density of 100 Gbit/in magnetic recording head. Structure of TMR recording head is different from typical giant magnetoresistive (GMR) spin-valve read head. It is essential to understand the electrostatic discharge (ESD) effect on TMR device behavior and its impacts on device characterization. In this paper, we reported several AlOx TMR device behaviors upon ESD stressing, which are different from GMR head.
Keywords :
electrostatic discharge; magnetic heads; magnetic recording; spin valves; tunnelling magnetoresistance; electrostatic discharge; giant magnetoresistive read head; high storage density; magnetic recording head; spin-valve read head; tunneling magnetoresistive recording head; Disk recording; Earth Observing System; Electrostatic discharge; Giant magnetoresistance; Magnetic heads; Magnetic recording; Magnetic sensors; Sensor phenomena and characterization; Threshold voltage; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376215
