DocumentCode :
2942034
Title :
Improved photon extraction by substrate thinning and surface roughening in 260 nm pseudomorphic ultraviolet light emitting diodes
Author :
Jianfeng Chen ; Grandusky, J.R. ; Mendrick, M.C. ; Gibb, S.R. ; Schowalter, L.J.
Author_Institution :
Crystal IS, Inc., Green Island, NY, USA
fYear :
2012
fDate :
7-9 Aug. 2012
Firstpage :
1
Lastpage :
4
Abstract :
We designed and fabricated 260 nm ultraviolet light emitting diodes that were pseudomorphically grown on AlN substrates. Thinning the substrates, roughening the emission surfaces, and encapsulating contributed to increasing the photon extraction efficiency by more than one order of magnitude.
Keywords :
III-V semiconductors; aluminium compounds; light emitting diodes; substrates; surface roughness; AlN; photon extraction efficiency; pseudomorphic ultraviolet light emitting diodes; substrate thinning; surface roughening; wavelength 260 nm; Light emitting diodes; Photonics; Power generation; Rough surfaces; Substrates; Surface roughness; Surface waves; -wire and -dot devices; Light-emitting diodes; Quantum-well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
Type :
conf
DOI :
10.1109/lec.2012.6410967
Filename :
6410967
Link To Document :
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