• DocumentCode
    2942046
  • Title

    A novel Doherty amplifier for enhanced load modulation and higher bandwidth

  • Author

    Sarkeshi, Mehdi ; Leong, Ooi Ban ; Van Roermund, Arthur

  • Author_Institution
    Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260
  • fYear
    2008
  • fDate
    15-20 June 2008
  • Firstpage
    763
  • Lastpage
    766
  • Abstract
    We are reporting a new topology for the Doherty amplifier to increase its bandwidth and enhance the load modulation. A varactor-based impedance transformer has been employed to replace the bulky and narrowband quarter-wave impedance inverter. Load modulation is carried out adaptively using the proposed varactor-based structure based on the input power level. An envelope detector is employed for adaptive impedance transformation of the carrier amplifier as well as bias adaptation of the peak amplifier. Based on the proposed topology, a 2W Doherty amplifier has been fabricated using discrete pHEMT transistors and low loss varactors. In order to evaluate the broad-band/multi-band performance of the proposed topology, measurements have been carried out at three sample frequencies (1.8 GHZ, 2 GHz and 2.2 GHz) over a 400 MHz bandwidth. Power added efficiency of better than 45.3% has been achieved at maximum power level and 6-dB power back-off and maintained over the entire bandwidth. Measured IM3 is better than -42.2 dBc at P1 dB of 33 dBm for all design frequencies.
  • Keywords
    amplifiers; high electron mobility transistors; impedance convertors; invertors; varactors; Doherty amplifier; discrete pHEMT transistors; enhanced load modulation; envelope detector; quarter-wave impedance inverter; varactor-based impedance transformer; Bandwidth; Capacitance; Envelope detectors; Frequency measurement; Impedance; Inverters; Optimized production technology; Power amplifiers; Topology; Varactors; Doherty; Doherty power amplifier; Power added efficiency; bandwidth;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2008 IEEE MTT-S International
  • Conference_Location
    Atlanta, GA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-1780-3
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2008.4632944
  • Filename
    4632944