Title :
A CMOS 3-dB directional coupler using edge-coupled meandered synthetic transmission lines
Author :
Chiang, Meng-Ju ; Wu, Hsien-Shun ; Tzuang, Ching-Kuang C.
Author_Institution :
Graduate Institute of Communication Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt road, Taipei, Taiwan
Abstract :
Design of CMOS 3-dB directional coupler by incorporating the edge-coupled meandered synthetic quasi-TEM transmission lines (TLs) is presented. The proposed synthetic TL, so-called the complementary-conducting strip coupled-line (CCS CL) consists of the unit cell, which has more design parameters than that of the conventional thin-film coupled-line (TF CL). The extensive theoretical analyses shows the proposed meandered CCS CL can break the process limitations on straight TC CL, achieving the coupling coefficient (k-value) with 10.8% improvement. The prototype of the 3-dB directional coupler is designed based on the proposed CCS CL and fabricated in an area of 120.0 times 240.0 mum (without contact pads) based on the standard 0.18-mum 1P6M CMOS technology. The experiments show the prototype can cover a bandwidth from 14.2 GHz to 36.9 GHz with a coupling of 4.5 dB. The literature survey shows that the presented design achieves the tight coupling with the highest efficiency on the circuit miniaturization.
Keywords :
CMOS integrated circuits; microstrip directional couplers; millimetre wave directional couplers; transmission lines; 1P6M CMOS technology; bandwidth 14.2 GHz to 36.9 GHz; circuit miniaturization; complementary-conducting strip coupled-line; directional coupler; edge-coupled transmission lines; meandered synthetic transmission lines; quasiTEM transmission lines; size 0.18 mum; Bandwidth; CMOS technology; Carbon capture and storage; Coupling circuits; Directional couplers; Prototypes; Strips; Transistors; Transmission line theory; Transmission lines; CMOS; Coupled transmission lines; directional coupler; microwave and millimeter-wave hybrid;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4632946