Title :
Transient analysis of memristors
Author :
Mazady, Anas ; Anwar, Mohd
Author_Institution :
Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
Development of resistance-switching random access memory (RRAM) employing memristors would be greatly facilitated once their transient behavior is properly understood. In this paper, we report transient behavior of memristors. The analysis is based on the dynamical characteristics derived analytically. A transient circuit model is also developed and simulated in cadence using HSPICE simulator.
Keywords :
memristors; random-access storage; transient analysis; Cadence simulation; HSPICE simulator; RRAM; memristors; resistance-switching random access memory; transient behaviour analysis; transient circuit model; Conductivity; Equations; Integrated circuit modeling; Mathematical model; Memristors; RLC circuits; Transient analysis; analysis; circuit; memristor; model; transient;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410974
