DocumentCode
2942156
Title
Three-stage bandpass filters implemented in silicon IPD technology using magnetic coupling between resonators
Author
Frye, Robert C. ; Liu, Kai ; Lin, Yaojian
Author_Institution
RF Design Consulting, LLC, Berkeley Heights, NJ, 08854, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
783
Lastpage
786
Abstract
Thin-film technologies most commonly use capacitors or inductors to couple resonator stages for the implementation of band-pass filters. The use of mutual inductance (referred to as magnetically coupled, to distinguish it from conventional inductive coupling) has some inherent advantages, especially for ESD robustness and DC isolation. Furthermore, this method is naturally suited for the implementation of balanced filters. This paper describes the design and characterization of some example bandpass filters for wireless LAN applications in silicon IPD technology using capacitively-loaded ring resonators coupled by mutual inductance.
Keywords
band-pass filters; cavity resonator filters; coupled circuits; electrostatic discharge; elemental semiconductors; inductance; silicon; thin films; wireless LAN; DC isolation; ESD robustness; Si; capacitively-loaded ring resonators; electrostatic discharge; integrated passive devices; magnetic coupling; mutual inductance; resonators; silicon IPD technology; thin-film technologies; three-stage bandpass filters; wireless LAN applications; Band pass filters; Capacitors; Electrostatic discharge; Inductance; Isolation technology; Magnetic separation; Mutual coupling; Robustness; Silicon; Thin film inductors; Bandpass filters; circuit topology; passive circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4632949
Filename
4632949
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