Title :
Early MMIC developments at Texas Instruments
Author :
Brehm, Gailon E.
Author_Institution :
TriQuint Semiconductor, 500 West Renner Road, Richardson, Texas 75025, USA
Abstract :
Early work at Texas Instruments demonstrated and enhanced MMICs based on GaAs MESFET active circuit elements combined with MIM capacitors and microstrip transmission lines formed on a semi-insulating GaAs substrate. This paper reviews those early breakthroughs in processing as demonstrated by novel circuit functions.
Keywords :
MIM devices; MMIC; Schottky gate field effect transistors; capacitors; gallium arsenide; microstrip lines; semiconductor materials; GaAs; GaAs MESFET active circuit elements; MIM capacitors; MMIC; Texas Instruments; microstrip transmission lines; semi-insulating substrate; Bridge circuits; Gallium arsenide; Instruments; MESFET integrated circuits; MIM capacitors; MMICs; Microwave integrated circuits; Power transmission lines; Silicon; Substrates; GaAs; MESFET; MMIC; MMICs; integrated circuit; low noise amplifier; module; monolithic microwave; phase shifter; power amplifier; transmit/receive;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4632959
