Title :
Design of GaN and SiC 5–20kV vertical superjunction structures
Author :
Zhongda Li ; Naik, H. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We report on the design, simulations and optimization of 5-20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-resistance (Ron, sp) have been obtained by varying the pillar dosage, length and width.
Keywords :
gallium compounds; p-n junctions; semiconductor device breakdown; semiconductor diodes; silicon compounds; space charge; GaN; SiC; breakdown voltage; pillar dosage; pillar length; pillar width; space charge; specific on-resistance; superjunction p-n diode; superjunction pillars; vertical superjunction structures; voltage 5 kV to 20 kV; GaN; SiC; super junction;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410985
