Title :
A 2 GHz oscillator using a monolithically integrated AlN TFBAR
Author :
Norling, Martin ; Enlund, Johannes ; Katardjiev, Ilia ; Gevorgian, Spartak
Author_Institution :
Physical Electronics Laboratory, Chalmers University of Technology, Göteborg, Sweden
Abstract :
A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.
Keywords :
Ge-Si alloys; III-V semiconductors; acoustic resonators; aluminium compounds; flip-chip devices; multichip modules; oscillators; phase noise; semiconductor thin films; thin film devices; transistors; wide band gap semiconductors; AlN; AlN TFBAR; AlN thin-film bulk acoustic resonator; Si; SiGe; SiGe transistors; frequency 2 GHz; high-resistivity silicon; oscillator; silicon-on-silicon multi-chip module; Acoustic devices; CMOS technology; Costs; Film bulk acoustic resonators; Germanium silicon alloys; Hybrid integrated circuits; Microwave oscillators; Q factor; Silicon germanium; Substrates; Acoustic resonator; TFBAR; hybrid integration; multi-chip module; oscillator; thin film device;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4632964
