Title :
35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology
Author :
Mahon, S.J. ; Dadello, A. ; Fattorini, A.P. ; Bessemoulin, A. ; Harvey, J.T.
Author_Institution :
Mimix Asia, Level 13, 80 Mount Street, North Sydney, NSW 2060, Australia
Abstract :
A 3.5 watt, 35 GHz power amplifier MMIC has been developed. The amplifier exhibits high performance at low processing cost, through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The single-ended four stage amplifier MMIC has 22 dB of gain at 35 GHz, 3.5 watts saturated output power (35.5 dBm), and power added efficiency of more than 25%, within a chip size of 12.75 mm2. In terms of power density, this is 740 mW/mm, which is to the authorspsila knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium arsenide; GaAs; chip size; frequency 35 GHz; pHEMT commercial technology; power added efficiency; power amplifier MMIC; power density; saturated output power; single-ended four stage amplifier MMIC; size 0.15 mum; size 100 mum; size 6 inch; Costs; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power measurement; Radio frequency; Radiofrequency amplifiers; Substrates; Temperature; MMIC power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4632967
