DocumentCode :
2942570
Title :
17-dB-gain CMOS power amplifier at 60GHz
Author :
Dawn, Debasis ; Sarkar, Saikat ; Sen, Padmanava ; Perumana, Bevin ; Yeh, David ; Pinel, Stephane ; Laskar, Joy
Author_Institution :
Georgia Institute of Technology, Atlanta, 30332-0269 USA
fYear :
2008
fDate :
15-20 June 2008
Firstpage :
859
Lastpage :
862
Abstract :
A 60 GHz power amplifier with 17 dB small signal gain is designed and measured using standard 90 nm CMOS process technology. Simulation predicted accurate performances. The 3-dB bandwidth exceeding 57 to 65 GHz is achieved. This power amplifier delivers +5.1 dBm output P1dB with a maximum gain of 17 dB at 61 GHz for 54 mW total DC consumption, achieving 5.8% PAE and a saturated output power of +8.4 dBm at 60 GHz. This is the highest gain CMOS power amplifier operating in the 60 GHz unlicensed band reported till date. The first temperature dependent output power characteristics of 60 GHz CMOS power amplifier shows very stable operation over the entire temperature range between 0degC and +80 degC.
Keywords :
CMOS integrated circuits; microwave power amplifiers; CMOS process technology; bandwidth 57 GHz to 65 GHz; frequency 60 GHz; frequency 61 GHz; gain 17 dB; millimeter wave amplifier; power 54 mW; power amplifier; small signal gain; temperature 0 degC to 80 degC; temperature dependence; CMOS process; Gain measurement; Measurement standards; Power amplifiers; Power generation; Power measurement; Signal design; Signal processing; Temperature dependence; Temperature distribution; 60GHz; 90nm; CMOS; PAE; millimeter wave; power amplifier (PA); small signal gain; temperature characteristics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2008.4632968
Filename :
4632968
Link To Document :
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