Title :
Novel magnetic nanostructured multilayer for high sensitive magnetoresistive sensor
Author :
Xiaolu Yin ; Sy-Hwang Liou
Author_Institution :
Dept. of Phys. & Astron., Univ. of Nebraska, Lincoln, NE, USA
Abstract :
The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistive sensor. In this paper, we compare two magnetic tunnel junctions with different free layer thicknesses that have very different magnetic characters, such as magnetization reversal behavior, magnetic corecivity, magnetic saturation field, and tunnel magnetoresistance ratio etc. In this study, we show a sensor with a sensitivity as high as 1916 %/mT. This magnetic sensor only dissipates 20 μW of power while operating under an applied voltage of 1 V.
Keywords :
ferromagnetic materials; magnetic field measurement; magnetic sensors; magnetisation reversal; magnetoresistive devices; nanosensors; nanostructured materials; tunnelling magnetoresistance; free layer thickness; high sensitive magnetoresistive sensor; magnetic corecivity; magnetic nanostructured multilayer; magnetic saturation field; magnetic tunnel junction; magnetization reversal behavior; power 20 muW; soft ferromagnetic layer; tunnel magnetoreistance ratio; voltage 1 V; Annealing; Junctions; Magnetic fields; Magnetic flux; Magnetic tunneling; Sensitivity; Tunneling magnetoresistance;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411027
