Title :
18-GHz bandwidth long-wavelength MODFET and metal-semiconductor-metal photodetector-based integrated photoreceiver
Author :
Fay, P. ; Wohlmuth, W. ; Adesida, I. ; Caneau, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In this work, we report a further advance in the implementation of photoreceivers based on MSM-PDs and MODFETs, with a -3-dB bandwidth of 18 GHz and a sensitivity at a low bit-error-rate at 10 Gbit/s inferred from noise power measurements. The integration of MSM-PD and MODFET is done via a vertical integration scheme.
Keywords :
HEMT integrated circuits; errors; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; photodiodes; sensitivity; 10 Gbit/s; 18 GHz; GHz bandwidth; MSM-PDs; integrated photoreceiver; long-wavelength MODFET; low bit-error-rate; metal-semiconductor-metal photodetector; noise power measurements; sensitivity; vertical integration scheme; Bandwidth; Bit rate; Clocks; Electrons; Fiber lasers; HEMTs; Laser mode locking; MODFETs; Optical distortion; Optical signal processing;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.908206
