DocumentCode :
2942993
Title :
Broadband tunable filters using high Q passive tunable ICs
Author :
Nguyen, Manh-Tai ; Yan, Winter D. ; Horne, Edward P.W.
Author_Institution :
Paratek Microwave Inc., Columbia, MD 21046 USA
fYear :
2008
fDate :
15-20 June 2008
Firstpage :
951
Lastpage :
954
Abstract :
This paper presents the performance of tunable bandpass filters using high Q, wide-tuning-range passive tunable ICs. These passive tunable ICs are fabricated using ParaScantrade, Paratekpsilas proprietary doped BST material. The tunable capacitors in these passive ICs have a tuning ratio of 4.15:1 and a Q factor over 100, from 100 MHz to 1 GHz. Two tunable filters using these passive tunable ICs were designed, fabricated, and tested. The two-pole tunable filter has a tuning range of 56% from 300 to 470 MHz, an insertion loss less than 2 dB over the entire tuning range, and an IIP3 of 52 dBm. The three-pole filter demonstrates a tuning range of 74% from 230 to 400 MHz, an insertion loss less than 2.5 dB. Control of the tunable filters is achieved through an on-board, high voltage ASIC and a microprocessor. The two-pole filter has been evaluated over temperature from -40degC to 85degC and minimal temperature drift was observed.
Keywords :
UHF filters; application specific integrated circuits; band-pass filters; circuit tuning; ferroelectric capacitors; microprocessor chips; radiofrequency integrated circuits; ParaScan; Q factor; broadband tunable filters; frequency 100 MHz to 1 GHz; frequency 230 MHz to 470 MHz; high Q passive tunable ICs; high voltage ASIC; insertion loss; microprocessor; temperature -40 degC to 85 degC; temperature drift; three-pole filter; tunable bandpass filters; tunable capacitors; tuning ratio; two-pole tunable filter; Application specific integrated circuits; Band pass filters; Binary search trees; Capacitors; Insertion loss; Passive filters; Q factor; Temperature; Testing; Voltage control; Barium strontium titanate (BST); bandpass filters; passive integrated circuits; software defined radios; tunable devices and circuits; varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2008.4632991
Filename :
4632991
Link To Document :
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