A 3.7-mW zero-dB fully integrated active bandpass filter at Ka-band in 0.18-μm CMOS

A 3.7-mW 0-dB fully integrated two-order active bandpass filter at Ka-band using the standard 0.18-μm 1P6M CMOS technology is presented for the first time. The filter is used the active resonator, which is composed of the synthetic quasi-TEM transmission line (TL) and a differential nMOS cross-coupled pair that provides Q-enhancement. The on-wafer measurements show the prototype has a bandwidth of 18.8%, with a −4.6 dBm 1-dB compression point (P1dB) at 34.2 GHz, consuming the power of 3.7 mW. The on-chip noise figure (NF) is 7.0 dB in the passband. The effective size of the prototype is 275.0 μm × 420.0 μm (without contact pads), showing the potential on system integration for monolithic microwave integrated circuit (MMIC) applications.