Title :
Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs
Author :
Santhakumar, Rajkumar ; Pei, Yi ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
University of California, Santa Barbara, 93106, USA
Abstract :
Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S21 of 5.2plusmn1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S21 of 12plusmn1dB from 2-32GHz. The process consists of 200nm gate-length HEMTs, CPW transmission lines, MIM capacitors and thin-film resistors. The dual-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz.
Keywords :
HEMT circuits; aluminium compounds; distributed amplifiers; millimetre wave amplifiers; wideband amplifiers; AlGaN-GaN; dual-gate HEMT; monolithic broadband distributed amplifiers; monolithic millimeter-wave distributed amplifiers; Aluminum gallium nitride; Coplanar waveguides; Distributed amplifiers; Gallium nitride; HEMTs; MODFETs; Measurement standards; Millimeter wave measurements; Power transmission lines; Transmission line measurements; GaN; HEMT; MMIC; broadband amplifiers; cascode; distributed amplifiers; dual-gate; power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633019
