Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs

Author

Santhakumar, Rajkumar ; Pei, Yi ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

University of California, Santa Barbara, 93106, USA

fYear

2008

fDate

15-20 June 2008

Firstpage

1063

Lastpage

1066

Abstract

Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S₂₁ of 5.2plusmn1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S₂₁ of 12plusmn1dB from 2-32GHz. The process consists of 200nm gate-length HEMTs, CPW transmission lines, MIM capacitors and thin-film resistors. The dual-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz.

Keywords

HEMT circuits; aluminium compounds; distributed amplifiers; millimetre wave amplifiers; wideband amplifiers; AlGaN-GaN; dual-gate HEMT; monolithic broadband distributed amplifiers; monolithic millimeter-wave distributed amplifiers; Aluminum gallium nitride; Coplanar waveguides; Distributed amplifiers; Gallium nitride; HEMTs; MODFETs; Measurement standards; Millimeter wave measurements; Power transmission lines; Transmission line measurements; GaN; HEMT; MMIC; broadband amplifiers; cascode; distributed amplifiers; dual-gate; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633019

Filename

4633019