Title :
Exchange anisotropy in epitaxial (001)Co50FE50/IRMn system
Author :
Yang, C. ; Lai, C.
Author_Institution :
Nat. TsingHua Univ., Hsinchu
Abstract :
In this study, the growth of epitaxial (001) Co50Fe50/IrMn bilayers by using the epitaxial Cu underlayers on Si substrates, instead of the previously reported MgO substrates is demonstrated using dc magnetron sputtering. The highly conductive Cu underlayers can be used as bottom leads in magnetic tunneling junctions (MTJs). In addition, the anisotropy constants and the magnetization reversal mechanism of (001) Co50Fe50/IrMn bilayer were studied.
Keywords :
antiferromagnetic materials; cobalt alloys; exchange interactions (electron); ferromagnetic materials; iridium alloys; iron alloys; magnetic anisotropy; magnetic epitaxial layers; magnetic tunnelling; magnetisation reversal; manganese alloys; metallic epitaxial layers; sputter deposition; vapour phase epitaxial growth; (001)Co50Fe50-IrMn bilayer system; Co50Fe50-IrMn; Cu-Si; MTJ bottom leads; Si; Si substrate; anisotropy constants; dc magnetron sputtering; epitaxial Cu underlayers; epitaxial growth; magnetic tunneling junctions; magnetization reversal mechanism; Anisotropic magnetoresistance; Coils; Helium; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic tunneling; Magnetization reversal; Perpendicular magnetic anisotropy; Substrates;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376303
