Exchange anisotropy in epitaxial (001)Co50FE50/IRMn system

Author

Yang, C. ; Lai, C.

Author_Institution

Nat. TsingHua Univ., Hsinchu

fYear

2006

fDate

8-12 May 2006

Firstpage

579

Lastpage

579

Abstract

In this study, the growth of epitaxial (001) Co₅₀Fe₅₀/IrMn bilayers by using the epitaxial Cu underlayers on Si substrates, instead of the previously reported MgO substrates is demonstrated using dc magnetron sputtering. The highly conductive Cu underlayers can be used as bottom leads in magnetic tunneling junctions (MTJs). In addition, the anisotropy constants and the magnetization reversal mechanism of (001) Co₅₀Fe₅₀/IrMn bilayer were studied.

Keywords

antiferromagnetic materials; cobalt alloys; exchange interactions (electron); ferromagnetic materials; iridium alloys; iron alloys; magnetic anisotropy; magnetic epitaxial layers; magnetic tunnelling; magnetisation reversal; manganese alloys; metallic epitaxial layers; sputter deposition; vapour phase epitaxial growth; (001)Co₅₀Fe₅₀-IrMn bilayer system; Co₅₀Fe₅₀-IrMn; Cu-Si; MTJ bottom leads; Si; Si substrate; anisotropy constants; dc magnetron sputtering; epitaxial Cu underlayers; epitaxial growth; magnetic tunneling junctions; magnetization reversal mechanism; Anisotropic magnetoresistance; Coils; Helium; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic tunneling; Magnetization reversal; Perpendicular magnetic anisotropy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.376303

Filename

4262012