DocumentCode
2943758
Title
Optimization of highly efficient uncoated strained 1300-nm InGaAsP MQW lasers for uncooled high-temperature operation
Author
Ring, W.S. ; Lage, H. ; Taylor, A.J. ; Smith, I.S. ; Ash, R.M.
Author_Institution
Hewlett Packard, Ipswich, UK
fYear
1996
fDate
25 Feb.-1 March 1996
Firstpage
230
Lastpage
231
Abstract
Summary form only given. In conclusion, basic design rules for InGaAsP MQW lasers and the inherent trade off between far-field and 85 C temperature performance were established. Uncoated threshold currents as low as 19 mA at 85 C were recorded. An optimized uncoated production device was produced with all the elements necessary for uncooled high temperature applications.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; optical design techniques; optimisation; quantum well lasers; reflectivity; 1300 nm; 19 mA; 85 C; InGaAsP; InGaAsP MQW laser design; basic design rules; far-field; highly efficient uncoated strained 1300-nm InGaAsP MQW laser optimisation; optimized uncoated production device; temperature performance; uncoated threshold currents; uncooled high temperature applications; uncooled high-temperature operation; Bandwidth; Diode lasers; Fiber lasers; Gratings; Laser modes; Laser tuning; Pump lasers; Quantum well devices; Reflectivity; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications, 1996. OFC '96
Print_ISBN
1-55752-422-X
Type
conf
DOI
10.1109/OFC.1996.908251
Filename
908251
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