Using design based binning to improve defect excursion control for 45nm production

Author

Huang, Crockett ; Young, Chris ; Liu, Hermes ; Tzou, S.F. ; Tsui, David ; Tsai, Alex ; Chang, Ellis

Author_Institution

United Microelectron. Corp., Tainan

fYear

2007

fDate

15-17 Oct. 2007

Firstpage

1

Lastpage

3

Abstract

For advanced device (45 nm and below), we proposed a novel method to monitor systematic and random excursion. By integrating design information and defect inspection results into automated software (DBB), we can identify design/process marginality sites with defect inspection tool. In this study, we applied supervised binning function (DBC) and defect criticality index (DCI) to identify systematic and random excursion problems on 45 nm SRAM wafers. With established SPC charts, we will be able to detect future excursion problem in manufacturing line early.

Keywords

SRAM chips; semiconductor device manufacture; SPC chart; SRAM wafer; automated software; defect criticality index; defect excursion control; defect inspection; design based binning; manufacturing line; random excursion; size 45 nm; supervised binning function; systematic excursion; Data mining; Design methodology; Etching; Inspection; Metrology; Monitoring; Process design; Production; Random access memory; Sampling methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

978-1-4244-1142-9

Electronic_ISBN

1523-553X

Type

conf

DOI

10.1109/ISSM.2007.4446790

Filename

4446790