A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves

This paper presents a new method for calculating the gate resistance R_g and inductance L_g, of GaN HEMTs. The method consists in forward biasing the gate with low I_gs currents (I_gs>0; 0<V_gs<V_bi; drain open) and is based on the extrema of Z₁₁ curves. R_g and L_g are determined from the extrema of Z₁₁ curves measured (after conversion of S to Z parameters) at single DC gate forward current. This new method differs from those previously published in that it avoids the use of the resonance frequency in the imaginary part of Z₁₁ and the large DC gate forward current. The good agreement between experimental and model data confirms the validity of the proposed method.