Title :
Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere
Author :
Suzuki, K. ; Ishihara, Y. ; Sakoda, K. ; Shirai, Y. ; Hirayama, M. ; Teramoto, A. ; Ohmi, T. ; Watanabe, T.
Author_Institution :
TAIYO NIPPON SANSO Corp., Ibaraki
Abstract :
We have developed a PFC abatement system utilizing a 2 MHz ICP plasma source and two columns filled with Ca(OH)2/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2 MHz ICP plasma decomposes the PFCs. The Ca(OH)2/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F2 equivalent removal efficiency and CO2 equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO2 equivalent emissions were caused by power consumption.
Keywords :
calcium compounds; etching; oxidation; plasma materials processing; silicon; CO2 equivalent removal efficiency; Ca(OH)2-CaO; F2 equivalent removal efficiency; ICP plasma source; PFC abatement system; decompression atmosphere; fluorine acid drainage treatment; frequency 2 MHz; inductively coupled plasma; perfluorocompounds; power consumption; reactive fluorinated compounds immobilization; silicon oxidation film etching process; Atmosphere; Energy consumption; Etching; Oxidation; Plasma applications; Plasma materials processing; Plasma sources; Semiconductor films; Solids; Vacuum systems;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446796
