DocumentCode :
2944055
Title :
Demonstration of a 700 volt asymmetrical, 4H-SiC gate-turn-off thyristor (GTO)
Author :
Seshadri, S. ; Agarwal, A.K. ; Rowland, L.B. ; Casady, J.B. ; Brandt, C.D. ; Barrows, J. ; Piccone, D.
Author_Institution :
Sci. & Technol. Center, Northrop Grumman Corp., Pittsburgh, PA, USA
fYear :
1997
fDate :
23-25 June 1997
Firstpage :
36
Lastpage :
37
Abstract :
The potential of SiC-based power switching devices has been well recognized due to its superior materials properties relative to silicon. These properties (which include approximately 10/spl times/ higher breakdown voltage, 3/spl times/ higher band gap, 3/spl times/ higher thermal conductivity and 2/spl times/ higher electron saturated velocity) have the potential to yield significant size, weight and cost reductions as well as efficiency improvements at the systems level for commercial/military power utility and motor control applications. We report here progress on asymmetrical GTOs fabricated in 4H-SiC. The asymmetrical structure is easier to turn-off and has improved breakdown voltage capability compared to the symmetrical structure. The devices fabricated in this study have forward blocking voltage of 700 V in air even though the structures did not have any advanced edge termination. A forward voltage drop of 4.8 V was measured at 350/spl deg/C for a current density of 500 A/cm/sup 2/. Four GTO cells were combined to switch 1.4 amps. Storage times at turn-off were measured to be <100 ns at a current density of 500 A/cm/sup 2/, corresponding to a turn-off current gain of 1. In addition, 8 devices were combined in a package yielding 5 amps, indicating that current hogging is not a problem in these devices.
Keywords :
current density; electric breakdown; power semiconductor switches; semiconductor materials; silicon compounds; thyristors; wide band gap semiconductors; 1.4 A; 350 C; 4.8 V; 4H-SiC; 700 V; SiC; SiC-based power switching devices; asymmetrical GTO; breakdown voltage capability; current density; forward blocking voltage; gate-turn-off thyristor; Current density; Current measurement; Density measurement; Electrons; Material properties; Photonic band gap; Silicon; Switches; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
Type :
conf
DOI :
10.1109/DRC.1997.612465
Filename :
612465
Link To Document :
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