Title :
A novel wide-band-gap semiconductor based microelectronic gas sensor
Author :
Gurbuz, Y. ; Kang, W.P. ; Davidson, J.L. ; Kerns, D.V. ; Henderson, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Summary form only given. A wide-band-gap semiconductor, high temperature tolerant microelectronic gas sensor of diamond has been developed for oxygen, hydrogen and CO gas detection. This new device has been fabricated in the form of catalyst-adsorptive oxide(Pt-SnO/sub x/)/i(intrinsic)-diamond/p+(doped)diamond, representing a CAIS device structure. The key elements in this structure are SnO/sub x/ as a gas sensitive layer and PECVD (plasma enhanced chemical vapor deposited) diamond for high temperature operations. The major advantages of using diamond based structures with SnO/sub x/ for gas sensing are higher operating temperature range, higher gas sensitivity and selectivity, reliable sensing performance in harsh environments, simplicity in fabrication process, compatibility with silicon microfabrication technology, and cost efficiency.
Keywords :
diamond; elemental semiconductors; gas sensors; semiconductor devices; wide band gap semiconductors; C; CAIS device structure; CO; CO gas detection; H/sub 2/; H/sub 2/ gas detection; O/sub 2/; O/sub 2/ gas detection; PECVD diamond; SnO; SnO/sub x/ gas sensitive layer; catalyst-adsorptive oxide/intrinsic/semiconductor structure; diamond sensor; harsh environments; high temperature tolerant sensor; microelectronic gas sensor; plasma enhanced CVD diamond; reliable sensing performance; selectivity; sensitivity; wide-band-gap semiconductor; Chemical elements; Computer aided instruction; Gas detectors; Hydrogen; Microelectronics; Plasma chemistry; Plasma devices; Plasma temperature; Temperature distribution; Temperature sensors;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612469
